Projects per year
Personal profile
Courses
Engineering Math:Partial Differential Equations
Structures and Properties of Materials
Seminar
Semiconductor Experiments
Semiconductor Device Design
Process and Device Simulation for Semiconductor Technology
Structures and Properties of Materials
Seminar
Semiconductor Experiments
Semiconductor Device Design
Process and Device Simulation for Semiconductor Technology
Education
Ph.D., University of Texas,USA
Expertise related to UN Sustainable Development Goals
In 2015, UN member states agreed to 17 global Sustainable Development Goals (SDGs) to end poverty, protect the planet and ensure prosperity for all. This person’s work contributes towards the following SDG(s):
Keywords
- Material analysis
- Semiconductor device design
- TCAD
Fingerprint
Dive into the research topics where Ruey-Dar Chang is active. These topic labels come from the works of this person. Together they form a unique fingerprint.
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Collaborations and top research areas from the last five years
Recent external collaboration on country/territory level. Dive into details by clicking on the dots or
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Developing Differential Hall Technique to Investigate the Dopant Activation Mechanism near Room Temperature after Ion Implantation
Chang, R.-D. (PI)
01/08/24 → 31/07/25
Project: National Science and Technology Council › National Science and Technology Council Academic Grants
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Investigation of Activation Mechanisms during Microwave Annealing for Dopants Implanted under the Amorphization Threshold
Chang, R.-D. (PI)
01/08/23 → 31/07/24
Project: National Science and Technology Council › National Science and Technology Council Academic Grants
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Investigation of the Carrier Formation Mechanism Affected by Ion Implantation Defects
Chang, R.-D. (PI)
01/08/22 → 31/07/23
Project: National Science and Technology Council › National Science and Technology Council Academic Grants
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Low-Temperature Activation of Boron in Germanium Substrates with Low Implantation Damages
Chang, R.-D. (PI)
01/08/21 → 31/07/22
Project: National Science and Technology Council › National Science and Technology Council Academic Grants
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Activation Mechanism of Implanted N-Type Dopants at Low Temperatures without Solid-Phase Epitaxial Regrowth
Chang, R.-D. (PI)
01/08/20 → 31/07/21
Project: National Science and Technology Council › National Science and Technology Council Academic Grants
Research output
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Differential Hall analysis of the carrier profile in germanium due to the doping effect of as-implanted boron
Chang, R. D., Lee, B. W. & Lin, J. C., 02 2025, In: MRS Advances. 10, 2, p. 193-197 5 p.Research output: Contribution to journal › Journal Article › peer-review
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出席「International Conference on Ion Implantation Technology」報告
Chang, R.-D., 2024.Research output: Contribution to conference › International Conference Report
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A Surface Potential Model for Metal-Oxide-Semiconductor Transistors Operating near the Threshold Voltage
Chow, H. C., Lee, B. W., Cheng, S. Y., Huang, Y. H. & Chang, R. D., 10 2023, In: Electronics (Switzerland). 12, 20, p. 4242 - 4242 1 p., 4242.Research output: Contribution to journal › Journal Article › peer-review
Open Access -
Time evolution of donor activation at low temperatures with co-implantation of phosphorus and hydrogen in silicon
Lee, B. W., Lin, J. C., Chang, R. D., Chu, C. M. & Woon, W. Y., 04 2023, In: Materials Science in Semiconductor Processing. 157, 107332.Research output: Contribution to journal › Journal Article › peer-review
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Effect of hydrogen implantation on low-temperature activation of boron in silicon
Lin, J. C., Lee, B. W., Chang, R. D., Chu, C. M. & Woon, W. Y., 15 10 2021, In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms. 505, p. 58-63 6 p.Research output: Contribution to journal › Journal Article › peer-review
2 Scopus citations