Projects per year
Personal profile
Courses
Nanostructured and Nanotechnology
Seminar
Physics and Characterization of Semiconductor Devices
Semiconductor Device Physics
Advanced High-K Dielectrics and its Applications
Solid State Electronics
Education
Keywords
- Biosensor Devices
- Flash and Resistive Switching Memory Devices
- High-k Dielectrics
- Nanocrystals
- Si and Ge nanowire Devices
Expertise related to UN Sustainable Development Goals
In 2015, UN member states agreed to 17 global Sustainable Development Goals (SDGs) to end poverty, protect the planet and ensure prosperity for all. This person’s work contributes towards the following SDG(s):
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SDG 3 Good Health and Well-being
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SDG 7 Affordable and Clean Energy
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SDG 9 Industry, Innovation, and Infrastructure
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Collaborations and top research areas from the last five years
Projects
- 22 Finished
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Novel Tin Barrier Layer with Wnx/Ruo2 Electrode on La/Y Doped Hfo2 Ferroelectric Tunnel Junction for Artificial Intelligence Applications
Maikap, S. (PI) & Chen, Y.-P. (CoPI)
01/08/25 → 31/07/26
Project: National Science and Technology Council › National Science and Technology Council Academic Grants
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Novel Tin Barrier Layer with Wnx/Ruo2 Electrode on La/Y Doped Hfo2 Ferroelectric Tunnel Junction for Artificial Intelligence Applications
Maikap, S. (PI) & Chen, Y.-P. (CoPI)
01/08/24 → 31/07/25
Project: National Science and Technology Council › National Science and Technology Council Academic Grants
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Novel Tin Barrier Layer with Wnx/Ruo2 Electrode on La/Y Doped Hfo2 Ferroelectric Tunnel Junction for Artificial Intelligence Applications
Maikap, S. (PI)
01/08/23 → 31/07/24
Project: National Science and Technology Council › National Science and Technology Council Academic Grants
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Si Doped Hfo2 with Novel Sinx Interfacial Capping Layer for Ferroelectric Tunnel Junction and Neuromorphic Applications
Maikap, S. (PI)
01/08/22 → 31/07/23
Project: National Science and Technology Council › National Science and Technology Council Academic Grants
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Ferroelectric and Neuromorphic Characteristics by Using La Doped Hfo2 in Novel Top Electrode Engineered W/La:Hfo2/W Based Fefet for Future Artificial Intelligence Application
Maikap, S. (PI)
01/08/21 → 31/07/22
Project: National Science and Technology Council › National Science and Technology Council Academic Grants
Research output
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3-D Vertical Ferroelectric FETs for Nonvolatile Memory Design With Prolonged Retention Mechanism and Triple-Level Cell (TLC) by Voltage/Width Modulation
Lee, J. Y., Lou, Z. F., Aich, A., Lin, Y. D., Maikap, S., Cheng, I. C., Chen, T. & Lee, M. H., 01 06 2026, In: IEEE Transactions on Electron Devices. 73, 6, p. 3551-3556 6 p.Research output: Contribution to journal › Journal Article › peer-review
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Ferroelectric Memcapacitor on SOI for High Capacitive Ratio by Mechanism of Depletion Capacitance Modulation Toward Dimension Scaling Down
Lou, Z. F., Chen, B. R., Aich, A., Chen, J. H., Chang, S. T., Maikap, S., Su, P. & Lee, M. H., 02 2026, In: IEEE Electron Device Letters. 47, 2, p. 277-280 4 p.Research output: Contribution to journal › Journal Article › peer-review
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Sub-2 nm Equivalent-Oxide-Thickness Ferroelectric Transistors for Cryogenic Memory and Computing
Das, A., Senapati, A., Kumar, G., Lou, Z. F., Müller, J., Maskeen, J. S., Chang, Y. T., Tewari, M., Agarwal, A., Paul, A., Raffel, Y., Maikap, S., Kao, K. H., Agarwal, T., Lashkare, S., Lu, D., Larrieu, G., Lee, M. H. & De, S., 14 04 2026, In: ACS Nano. 20, 14, p. 10905-10918 14 p.Research output: Contribution to journal › Journal Article › peer-review
Open Access1 Scopus citations -
Symmetry-Guided Functional Pathways of Intercalation-Free Rhombohedral (R3) Hafnia Derived from the Fluorite Phase for Low-Coercive Ferroelectric Memory
Januar, M., Liu, C. H., Aich, A., Lee, J. Y., Maikap, S. & Lee, M. H., 15 04 2026, In: ACS Applied Materials and Interfaces. 18, 14, p. 20624-20634 11 p.Research output: Contribution to journal › Journal Article › peer-review
Open Access -
記憶體單元及其製造方法
Maikap, S. (Inventor), Chen, Y.-P. (Inventor), AICH, A. (Inventor), SENAPATI, A. (Inventor), LEE, M.-H. (Inventor) & LOU, Z.-F. (Inventor), 01 05 2026, IPC No. H10B 53/00(2023.01); H10B 53/30(2023.01); H10N 97/00(2023.01), Patent No. I924388Translated title of the contribution :MEMORY UNIT AND MANUFACTURING METHOD THEREOF Research output: Patent
Activities
- 3 Participating in a conference, workshop, ...
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55th IEEE Semiconductor Interface Specialists Conference (IEEE SISC)
Maikap, S. (Participant)
11 12 2024 → 14 12 2024Activity: Participating in or organizing an event › Participating in a conference, workshop, ...
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22nd International Workshop on the Physics of Semiconductor Devices (IWPSD)
Maikap, S. (Participant)
14 12 2023 → 17 12 2023Activity: Participating in or organizing an event › Participating in a conference, workshop, ...
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26th Silicon Nanoelectronics Workshop, SNW 2023
Maikap, S. (Participant)
11 06 2023 → 12 06 2023Activity: Participating in or organizing an event › Participating in a conference, workshop, ...