3d Nano-Ferromagnetic Materials and Devices for Soc Design( I )

Although magnetic and electrical effects are co-existence, it is still difficult to integrate both materials on a single chip. However, the nano-processing with 3D structure leads to be possible for new design methodology of innovative devices and system-on-chip. Magnetoelectrical effects on threshold-voltage variation of ferro-MOS devices to change the output current will be investigated in details for the coming three years.Magnetic nano-beads and ferromagnetic film deposited on transistors are proposed in order to increase the sensitivity of MOSFETs to the magnetic field. With higher sensitivity, magnetic sensor and ferromagnetic memory devices can be realized in CMOS technology. Post-IC processing is required for combination of magnetic material and integrated circuits, and will be described with the detailed the front-end readout circuits and back-end data transmission circuits for a wider application range. Finally, some innovative devices and system chip will be presented.

Project ID:PB10110-0060
External Project ID:NSC101-2218-E182-008