50nm Gate-Length Inaln/Gan Hemt Development for High Pae Power Amplifier Application in 5g Communication System

Taiwan had started planning fifth generation (5G) wireless and mobile internet service (Long Term Evolution, LTE). Currently, 5G technology spectrum will be defined as 28GHz or 60GHz, which are much higher than the spectrum 4G service used (2.6GHz) in the communications industry. However, 5G base station system development is in infant stage owing to Taiwan had few key technologies for high power base station industry. In addition, 5G communication system exists some serious demands on power amplifier linearity, output power density, and power added efficiency. Moreover, China and Korea are currently studying the 5G system and try to be the leading role in the Asian region. Therefore, although the semiconductor technology is in excellent development in Taiwan but Taiwan lacks of system and module integration ability for base station. For this project, first year, we will design and fabricate high frequency and low leakage current InAlN/GaN microwave power HEMT on 6 inch SOI substrate to reduce substrate loss tangent, And with low damage multi-cycle etching and nano-gate(LG=50nm) to improve high-frequency characteristics. Besides, device reliability was designed to be improved by using implant technology and micro-electromechanical technology on SOI substrate. During second year, cryogenic chamber low-frequency noise model will be used for device buffer and surface traps identification together with the trap activation energy extraction. In order to further evaluate InAlN/GaN reliability degradation mechanism, the low-frequency noise spectra will be measured before and after high current or high voltage stress. In addition, the modified Angelov model will also be adopted to establish the nonlinear larger signal model for InAlN/GaN HEMT on SOI substrate together with the trap effect and thermal effect equation descriptions. Finally, we will conduct low loss and high thermal dissipation AlN package technology to realize high efficiency InAlN/GaN Doherty power amplifier for 5G base station applications. Overall, the project can demonstrate novel InAlN/GaN microwave power HEMT on SOI substrate and its reliability will also studied in advance. After the device evaluation is fully understood and realized, the 10 Watt output power amplifier module will be also designed and demonstrated to enrich the system level ability for Taiwan 5G wireless communication facility industry.

Project ID:PB10608-3660
External Project ID:MOST106-2221-E182-064