Project Details
Abstract
Excess heat will limit the output performance of GaN related power devices, and the
long time existed low electric static discharge (ESD) handling capability is the common
problem of large scale GaN devices. Therefore, in the first year of this project we have used
the Flip Chip (FC) technology to solve the heat-sinking problem of a High Electron Mobility
Transistor (HEMT) and constructed a vertical MIS capacitance structure on the Silicon FC
submount to improve the ESD handling ability. However, insertion loss is an important issue
of those FC microwave power devices and the capacitance of the correspondent MIS FC
submount structure could cause that high insertion loss. Therefore, by altering the vertical
MIS capacitance structure to lateral MIM capacitance structure in this project, with low
insertion loss, the proposed silicon or AlN FC submount still can sink heat and prevent the
ESD damage effectively. Furthermore, this project will also adopt high-k materials or ZnO as
the dielectric layer to fabricate FC submonut to study their correspondent ESD handling
capability.
Furthermore, large-scale high output power HEMT is not easy to fabricate. If we want to
rise the output power, we need to increase the length width ratio respectively. However the
complexity will increase tremendously and cause the yield decreasing. Therefore, in this
project we will combine a single HEMT power module with two or more power HEMT
devices on top of an impedance matching FC submount to increase the output power. The
goal of this project is to achieve an output power of 10W with a single FC submount
configuration.
Project IDs
Project ID:PB9907-8620
External Project ID:NSC99-2221-E182-057
External Project ID:NSC99-2221-E182-057
Status | Finished |
---|---|
Effective start/end date | 01/08/10 → 31/07/11 |
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