A Study of HfO/sub 2/ Insulator Prepared by Atomic Layer Deposition for Nonvolatile Resistance Random

Several kinds of metal oxides with different materials has drawn more attention due to its possibility for nonvolatile memory applications. However, they did not deal with HfO2. In this proposal, we are interesting in the resistance switching property and conduction mechanism of a polycrystalline HfO2 insulator deposited by Atomic Layer Deposition. The electrical behavior is temperature-dependent and the switching behavior is influenced by temperature for both LRS and HRS. First year, we try to establish the resistive switching mechanism consistence with phenomena including device reliability, endurance, temperature effect, crystal structure, etc. The second year, we focus on the surface of the metal oxide to understancd the property of interface between electrode and oxide film and how this interface affect the switching characteristics of the HfO2 oxide RRAM device. First, the device are going to be treated with different kinds of surface treatment, different kinds of process, different wet and dry etching condition. The switching properties after during a series of surface treatment show different characteristics is an important topic to be understood. Second, different metal are used as top electrode. Furthermore, the stacked structure with inserting a thin oxide film between the electrode and oxide film would be discussed. We think this would clear the resistance switching properties and conduction mechanism of HfO2 RRAM among the experiments.

Project ID:PB9709-3589
External Project ID:NSC97-2221-E182-055