Project Details
Abstract
Recently, thin film transistor (TFT) technology has been greatly improved. In order to
improve performance, polycrystalline silicon has been chosen for next generation TFTs
because of the high carrier mobility. Polycrystalline TFTs have the potential to form a
system on a single panel without additional driving circuits. However, with larger grain
sizes of polycrystalline silicon films, the numbers of grains in the TFTs are decreased.
Therefore, the uniformity is degraded. In order to solve this problem, this project tries to
simulate excimer laser recrystallization process and to analyze the grain boundary
distribution from polycrystalline silicon films. We are going to develop a thermal
conduction simulation program including energy distribution and substrate temperature
effects for excimer laser annealing. After that, thermal budgets of solid phase
recrystallization and fluorine diffusion will be monitored to calibrate the thermal conduction
simulation. We will use Monte-Carlo method to simulate the formation of polycrystalline
silicon from original amorphous phase after excimer laser recrystallization. We will then
use electron microscopy to observe the image of the grains and use image processing to
extract the grain boundaries from the pictures. The extracted data will be saved and
compared to simulation results to verify the physical mechanism during excimer laser
recrystallization. This project will build up a system to simulate excimer laser
crystallization process. Methods to analyze the grain boundary distribution in
polycrystalline silicon films will be suggested. Methodology to calibrate the temperatures
during excimer laser annealing will be proposed. The results will help the development of
TFT technology.
Project IDs
Project ID:PB9308-3953
External Project ID:NSC93-2215-E182-001
External Project ID:NSC93-2215-E182-001
Status | Finished |
---|---|
Effective start/end date | 01/08/04 → 31/07/05 |
Keywords
- polycrystalline silicon
- excimer laser
- recrystallization
- thin film transistor
- simulation
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