Analysis and Simulation of Super Lateral Growth during Polycrystalline Silicon Formation by Laser Recrystallization

Project: National Science and Technology CouncilNational Science and Technology Council Academic Grants

Project Details


Recently, thin film transistor (TFT) technology has been greatly improved. In order to improve performance, polycrystalline silicon has been chosen for next generation TFTs because of the high carrier mobility. Polycrystalline TFTs have the potential to form a system on a single panel without additional driving circuits. However, with larger grain sizes of polycrystalline silicon films, the numbers of grains in the TFTs are decreased. Therefore, the uniformity is degraded. In order to solve this problem, this project tries to simulate excimer laser recrystallization process and to analyze the grain boundary distribution from polycrystalline silicon films. We are going to develop a thermal conduction simulation program including energy distribution and substrate temperature effects for excimer laser annealing. After that, thermal budgets of solid phase recrystallization and fluorine diffusion will be monitored to calibrate the thermal conduction simulation. We will use Monte-Carlo method to simulate the formation of polycrystalline silicon from original amorphous phase after excimer laser recrystallization. We will then use electron microscopy to observe the image of the grains and use image processing to extract the grain boundaries from the pictures. The extracted data will be saved and compared to simulation results to verify the physical mechanism during excimer laser recrystallization. This project will build up a system to simulate excimer laser crystallization process. Methods to analyze the grain boundary distribution in polycrystalline silicon films will be suggested. Methodology to calibrate the temperatures during excimer laser annealing will be proposed. The results will help the development of TFT technology.

Project IDs

Project ID:PB9308-3953
External Project ID:NSC93-2215-E182-001
Effective start/end date01/08/0431/07/05


  • polycrystalline silicon
  • excimer laser
  • recrystallization
  • thin film transistor
  • simulation


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