Atomic Layer Deposition for Nanometer Metal Gate and High-K Dielectrics and Application to DRAM(II)

The topics of this proposal were specified on the process development on ALD and application to DRAM, especially for the high-k capacitors. In order to get the several atomic layers for DRAM production, how to get the matured and stable procedures is the most important for manufacturing. ALD is the best alternative process for ULIS fabrication. It contains two parts and summarized as following: (一) DRAM dielectrics process by ALD HfO2 and Al2O3: 1. The option of Precursors 2. Pre-clean Effects on the ALD interfacial layer。 3. Nitrided and fluorinated HfO2 or Al2O3 Capacitor。 4. Al doped HfO2 Capacitor。 5. Reliability study for the ultra-thin dielectrics (effective thickness ＜1.2 nm) (二) DRAM electrodes process by ALD Metal Gate (W, Mo, Ta): 1. Gate Dielectric Leakage 2. Interface State 3. Reliability (TDDB) 4. ALD Metal Gate Capacitor with HfO2 dielectrics。 5. Thermal Stability for ALD Metal Gate。（600~1000℃） 6. Work function for ALD Metal

Project ID:PB9402-0096
External Project ID:NSC94-2623-7182-007-AT