Atomistic Modeling of Dopant Activation for Ultra-Shallow Junctions

Ion implantation is the major technology to form ultra-shallow junctions for nano-devices. Implantation creates damages which are annihilated by subsequent heat treatments. However, heat treatments induce uncontrolled transient redistribution and activation of dopants from implantation damages. The theory of dopant transient behaviors is complex due to coupled physical reactions. The physical models need further analysis and calibration. This project will perform experiments to elucidate the physical reactions of dopant activation. Atomistic models for dopant activation will be developed to improve the ultra-shallow junction technology. In the first year, dopant activation experiments will be performed to overcome the limitation. We will try to use laser annealing, solid phase epitaxy and strain to improve activation. Dopant deactivation will also be investigated by experiments. The correlation between dopants, defects, and diffusion will be examined. In the second year, the transient behavior of dopant activation and deactivation will be analyzed. We will simulate laser annealing and develop methods to calibration the simulation. After that, the kinetic mechanisms of dopant reactions will be identified and implemented into atomistic simulation tools. Atomistic simulation of dopant activation and deactivation will be simulated by the Monte- Carlo method.

Project ID:PB9706-1805
External Project ID:NSC96-2221-E182-046-MY2