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Design and Fabrication of Algan High Electron Mobility Transistors (Hemts) Based Photonic Devices and Their Applications in Ultraviolet Wireless Communications

Project: National Science and Technology CouncilNational Science and Technology Council Academic Grants

Project Details

Abstract

以化合物半導體 ‒ 氮化鋁鎵(AlGaN)所研製的功率/高頻電子元件不僅可滿足消費/工業電子需求外,這些材料所具備的優異光發射/光偵測特性,讓其有更廣泛的應用潛力。有鑑與此,本計畫提出以AlGaN光子元件搭配紫外光發光二極體(UV LED)研製兼具抑菌與數據傳輸能力的無線光通訊系統,紫外光通訊除了具有免頻道許可、傳輸速度快、安全性高等優點外,其也能與毫米波/Wi-Fi系統一起應用於5G/6G行動網路或物流網(IoT),因此在研究上具有相當程度的重要性。

Project IDs

Project ID:PB11407-13622
External Project ID:NSTC114-2221-E182-004
StatusFinished
Effective start/end date01/08/2531/07/26

Keywords

  • GaN
  • high electron mobility transistors (HEMT)
  • photodiodes (PDs)
  • integrated photonic device
  • optical wireless communication.

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