Design and Fabrication of Non-Planar Metal-Semiconductor-Metal (Msm) Photodiodes with Algan/Aln Superlattice Absorption Layer and Their Application in Ultraviolet Light Communications

Tsai, Chia-Lung (PI)

Department of Electronic Engineering

Project: National Science and Technology Council › National Science and Technology Council Academic Grants

Abstract

著眼於紫外光通訊擁有諸多優點，再加上其可與傳統無線通訊一起應用於5G行動網路或物流網，因此本計畫預計開發構建於MSM PD的紫外光通訊系統。為了解決傳統UV PD (AlGaN/GaN buffer/sapphire)磊晶品質不佳的問題，本計畫擬最佳化應力調整層結構以磊晶成長高鋁(x ＞ 0.4)含量AlxGa1-xN，此外，我們將以AlGaN/AlN超晶格結構作為光吸收層並研製適用於紫外光通訊的非平面型MSM PD。實驗上，利用直線或非直線視距光通道並配合適當的調變技術或以角度分集接收後系統的傳輸性能將可達200 Mbit/s，計畫研究成果預期可進一步拓展UV PD的應用領域或經濟規模。

Project IDs

Project ID:PB11107-8615
External Project ID:MOST110-2221-E182-056-MY2

Status	Finished
Effective start/end date	01/08/22 → 31/07/23

Keywords

Epitaxial growth
strain relief layer
AlGaN/AlN superlattice
metal-semiconductor-metal photodiode (MSM PD)
ultraviolet light communication.

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Design and Fabrication of Non-Planar Metal-Semiconductor-Metal (Msm) Photodiodes with Algan/Aln Superlattice Absorption Layer and Their Application in Ultraviolet Light Communications

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Abstract

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