Design of High Power Rf Amplifier by Using Solid State Devices

The goal of this project is to develop the technology of constructing high power amplifier by using modern solid-state devices. The rapid development of GaN HEMT technology that results the GaN device can be operated under 2~3 times applied voltage and provide roughly double the allowable current per unit FET gate width as compared to GaAs devices. That allows the GaN HEMT can be designed with higher output impedance matching network for achieving similar output power. Therefore, the GaN high power amplifiers have become important components for the future military industry and so that a GaN power amplifier operating at the frequency band of 0.5~2.0GHZ with 100W output power will be constructed in this project. But not only the fabrication of power amplifier module will be delivered in the end of this project, but the people join this project can also obtain the capabilities of designing and assemble technique in this project.

Project ID:PB10602-0173
External Project ID:MOST106-2623-E182-001-D