Develop the High Power Ingan-Based Green Led by Using Surfactant Technology

This project will execute for three years. The main topic of this project is how to grow the defect less GaN and AlN epilayer by using surfactant technology, and then apply surfactant technology to MQWs of InGaN Green LED. Finally, use the superior high power green light emitting diode epi-structure in different substrate, such as SiC and Si substrate. The following sub-project is implemented within three years. First year: Develop the epitaxial process of surfactant in MOCVD by using TMSb and TMBi as the surfactant precursor. Expect to acquire a low defect density and a high crystalline quality GaN and AlN epilayer on sapphire substrate. Second year: Develop the epitaxial process of importing the surfactant concept into the InGaN/GaN active layer. Expect to acquire a high light-emitting efficiency, InGaN-based, green LED epiwafer. The green epiwafers will be fabricated and do all the electrical and optical measurement. Third year: Combining the accomplishment in the first and second years, we will grow the high power light emitting diodes epi-structure on different substrates such as SiC and Si, separately. And modify the growth conditions according to the distinct characteristic of each substrate. With the comprehensive study, we do expect a novel generation of high power LEDs.

Project ID:PB10007-2292
External Project ID:NSC100-2221-E182-011