Developement of High-Power Gan Devices for Fifth-Generation Mobile Networks Applications

Project: National Science and Technology CouncilNational Science and Technology Council Academic Grants

Project Details

Abstract

隨著市場對於高轉換效率的功率元件需求不斷成長,低成本高容量低損耗的矽基板之氮化鎵元件有機會實現單晶片微波前端電路,為目前第五代行動通訊發展的最佳選擇,本計畫優先探討氮化鎵元件之通道的缺陷和可靠度問題並建置模型,以提供電路設計精準模型,有助於高效率的能源傳輸與利用,為5G世代所需之小基地台的重要關鍵技術,此時為最佳時刻藉此計畫開發台灣高功率電子工業並擴及至行動通訊上的應用。

Project IDs

Project ID:PB11007-2694
External Project ID:MOST110-2221-E182-057-MY2
StatusFinished
Effective start/end date01/08/2131/07/22

Keywords

  • GaN
  • pulse measurement
  • reliability
  • model.

Fingerprint

Explore the research topics touched on by this project. These labels are generated based on the underlying awards/grants. Together they form a unique fingerprint.