Developing Differential Hall Technique to Investigate the Dopant Activation Mechanism near Room Temperature after Ion Implantation

Chang, Ruey-Dar (PI)

Department of Electronic Engineering

Project: National Science and Technology Council › National Science and Technology Council Academic Grants

Abstract

目前記憶體內運算已成為延續摩爾定律重要的議題，三維積體電路是必須發展的方向。本計畫開發適用於低溫高缺陷條件下的差分霍爾量測技術，釐清摻雜近室溫活化的機制，協助導入低溫離子製程於三維積體電路，可望在學理及實務上皆有所貢獻。

Project IDs

Project ID:PB11307-2602
External Project ID:NSTC113-2221-E182-042-MY2

Status	Active
Effective start/end date	01/08/24 → 31/07/25

Keywords

ion implantation
Hall measurement
activation
defect
germanium

Access Project

https://www.grb.gov.tw/search/planDetail?id=16562001