Development and Study of the New Nanocrystal Material & Device

The main objective of the project is to use different High-K materials such as AlN or TiO2 are used to become proper insulators as the tunneling and control oxides of the memory devices. We would like to develop high melting point and high Gibbs free energy High-K materials, which can form stable bonding with oxygen rapidly. The formation of the nanocrystal quantum dots are found when the heating temperature is over than the melting point; and at the same time, the high-K materials can react with oxygen rapidly to become stable and low leakage insulators, which can be used to fabricate the memory device with fast programming speed and superior charge storage. Besides, the metal materials are used as metal gate (Pt, Y) combined with the High-K materials. The programming and erasing speeds are studied under different operation voltage and time, and the charge loss situation is investigated through many programming/erasing operations for technology improvement. Finally, the new nanocrystal quantum device with double gate structure will be developed by using high-k material. It’s expected that the advanced nano-crystal quantum devices can be applied practically on the nonvolatile memory.

Project ID:PB9709-0747
External Project ID:NSC97-2221-E182-006