Development of Aluminum Gallium Nitride Exciton Emitting Deep Ultraviolet Light Emitting Diode Using Stress Compensation Structure

Project: National Science and Technology CouncilNational Science and Technology Council Academic Grants

Project Details

Abstract

UVB LED近年在皮膚病症上有許多光療的應用,對於光療之光源發光頻譜需求要盡可能的窄。我們藉由先前的實驗基礎希望可以進一步釐清並改善UVB LED發光效率,除了通過應變補償的技巧增加電洞數並使電子電洞直接複合的速率更快外,藉由改變量子井的奈米結構寬度提升激子的複合速率,也藉由增加多重量子井數目的改變,不僅要考慮到電子電洞對複合速率的增加也同時考慮到載子數本身在量子井准中性區的數目,使可以不僅提升UVB的激子放射元件的效率也同時提高其元件功率,希望可以順利開發出UVB LED delta function的能階密度,可以大大減少元件放光頻譜的半高寬。

Project IDs

Project ID:PB11107-7841
External Project ID:MOST111-2221-E182-061
StatusFinished
Effective start/end date01/08/2231/07/23

Keywords

  • MOCVD
  • AlGaN
  • UVB LED
  • Exciton

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