Development of Aluminum Gallium Nitride Exciton Emitting Deep Ultraviolet Light Emitting Diode Using Stress Compensation Structure(Ii)

Project: National Science and Technology CouncilNational Science and Technology Council Academic Grants

Project Details

Abstract

本計畫是要開發藉由P-N二極體中的奈米結構,電子注入與電洞注入量子井中,也可直接產生"束縛電子電洞對",產生激子放射光。我們提出DUV LED先求有電洞數的創新的結構與設計(SREE),我們希望開發AlGaN LED的激子放射。想像一下,我們來做氮化鋁鎵深紫外線發光元件中電子與電洞的媒人,試圖將Electrons先生和Holes小姐結合起來,以確保她們從一而終單純美好的婚姻,有什麼可能的辦法嗎? 我們雖然犧牲了一些光子被P型氮化鎵所吸收,但是這樣可以換取更多的綠色能源效率-有時更多的增益來自於損失!

Project IDs

Project ID:PB11207-2855
External Project ID:NSTC112-2221-E182-042
StatusActive
Effective start/end date01/08/2331/07/24

Keywords

  • MOCVD
  • AlGaN
  • UVB LED
  • Exciton

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