Development of Aluminum Gallium Nitride Exciton Emitting Deep Ultraviolet Light Emitting Diode Using Stress Compensation Structure(III)

Project: National Science and Technology Council › National Science and Technology Council Academic Grants

Project Details

Abstract

本計畫是要開發解決306 nm UVB量子井似電中性不滿足 , 藉由P-N二極體中的電子阻擋層及P電洞中性區的妥協與調整，使得多出載子的電子注入及相伴數量的多出電洞注入量子井中，經由理論計算Al0.38Ga0.62N電子電洞對形成激子(Exciton)的庫倫吸引力可達368K。實驗論證可直接產生"束縛電子電洞對"，可產生號稱發光神器的激子放射光。我們提出DUV LED先求有電洞數及足夠的電子阻擋層，創新的思維、結構與設計，希望可以開發出AlGaN DUV LED的激子放射光。

Project IDs

Project ID:PB11307-2047
External Project ID:NSTC113-2221-E182-034
StatusFinished
Effective start/end date01/08/24 → 31/07/25

Keywords

  • MOCVD
  • AlGaN
  • UVB LED
  • Exciton

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