Development of Designig Microwave Wideband Downconverter on Single Chip Substrate with 0.13.mu.m CMOS Technology

Recently, the rapid progress in IC and nano-device technologies lead to many RF circuits used in wireless communication systems can be fabricated by using Si technology. The other trend of researches in RF circuits is to develop the technology that integrates different circuits into a single chip as a module of system on chip (SOC). Beside, to push the SOC module operated at higher frequency band with consuming lower power has also become an important trend. According to our experience in designing X band down converter circuits fabricated by using 0.18m CMOS technology and the continuous progress in CMOS submicron technology, we believe that a single chip low-noise down converter operated at the other ISM band, which is higher than X-band, might be designed and fabricated by the modern CMOS technology. Therefore we plan to adopt 0.13m CMOS submicron technology to design the single chip low-noise down converter module operated 24GHz. In such a downconverter module, the self-biased low-noise amplifiers, the miniature image rejection filter or coupler; new type Gilbert cell mixer with active balun will be designed and fabricated. The local oscillator of the down-converter will be realized by a frequency synthesizer, which consists of modified current-reused complementary oscillator, low power injection-locked divider, frequency divider, loop filter, phase detector and control circuit, will also be designed and fabricated. Finally we will integrate all of previous mentioned circuits into a single Si chip as a single chip low-noise down converter module to achieve the design goals of compact size, low power consumption and using one supply voltage only.

Project ID:PB9902-0545
External Project ID:NSC97-2221-E182-016-MY3