Development of High-Performance Amorphous Oxide Semiconductor Thin-Film Transistors Using Rare-Earth Oxide Films as a Gate Dielectric

In this proposal, the author will develop high-efficiency three amorphous oxide semiconductor (AOS) thin-film transistors (TFTs) using two rare-earth (RE) oxide gate dielectrics (CeO2 and CeTixOy) within 3 years. In the first year, we develop high quality of high-K CeO2 and CeTixOy gate dielectrics for AOS TFT applications. The structural and electrical characteristics of CeO2 and CeTixOy dielectric films prepared under different Ar/O2 flows and film thicknesses and annealed at different temperatures were investigated. In the second year, By using low-temperature sputtering system, deposition conditions such as sputtering gas-pressure and deposition temperature, will be used to change three InZnO, ZnSnO and InZnSnO properties. We explore the structural and electrical characteristics of InZnO, ZnSnO and InZnSnO TFT devices using CeO2 and CeTixOy gate dielectrics. In the third year, the electrical reliabilities of InZnO, ZnSnO and InZnSnO TFT devices using CeO2 and CeTixOy gate dielectrics are studied under positive/negative bias stress (PBS/NBS), light stress (LS), positive/negative bias-light stress (PBLS/NBLS), positive/negative-bias temperature instability (PBTI/NBTI), and high temperature/moisture effect.

Project ID:PB10507-1705
External Project ID:MOST105-2221-E182-064