Development of High Performance Thin-Film Transistors for Flexible Substrate Applications

Rare-earth (RE) oxides are also widely studied because of high dielectric constant, large energy gap, and good thermal stability. In addition, ferroelectric materials are a very good dielectric associated with good phase transitions in both polarized and non-polarized states. They possess the negative capacitance and polarization properties for use in large-scale electronic components. In this proposal, the author will develop high-performance InGaZnO TFT flexibles using three RE oxide films (CeTixOy, NdTixOy, and GdTixOy)/three ferroelectrics (BiFeO3, SrTiO3 and BaTiO3) stacked gate dielectrics for flexible panel applications within 3 years. In the first year, we develop the high quality of CeTixOy, NdTixOy, and GdTixOy/BiFeO3, SrTiO3 and BaTiO3 stacked gate dielectrics for InGaZnO TFT applications. The structural and electrical characteristics of CeTixOy, NdTixOy, and GdTixOy/BiFeO3, SrTiO3 and BaTiO3 stacked gate dielectric films prepared under different Ar/O2 flows and film thicknesses and annealed at different temperatures were investigated. In the second year, by using low-temperature sputtering system, deposition conditions such as sputtering gas-pressure and deposition temperature, will be used to change InGaZnO properties in the flexible panels. We explore the structural and electrical characteristics of InGaZnO TFT flexible devices using CeTixOy, NdTixOy, and GdTixOy/BiFeO3, SrTiO3 and BaTiO3 stacked gate dielectrics. In the third year, the electrical reliabilities of InGaZnO TFT flexible devices using CeTixOy, NdTixOy, and GdTixOy/BiFeO3, SrTiO3 and BaTiO3 stacked gate dielectrics are studied under positive/negative bias stress (PBS/NBS), light stress (LS), positive/negative bias-light stress (PBLS/NBLS), positive/negative-bias temperature instability (PBTI/NBTI), and high temperature/moisture effect.

Project ID:PB10907-2379
External Project ID:MOST109-2221-E182-028