Development of Indium Gallium Zinc Oxide Used in Nano Memory and Biosensor

  • Kao, Chyuan-Haur (PI)

Project: National Science and Technology CouncilNational Science and Technology Council Academic Grants

Project Details


In recent years, several high-k metal oxides have been intensively studied due to their higher permittivity, better reliability, faster writing/erasing operation and better endurance. InGaZnO can reduce the size of the thin film transistor, and the carrier mobility is 20 to 30 times larger than that of the amorphous silicon, and can improve the charge-discharge rate of the TFT to the pixel electrode. IGZO has good driving ability, can achieve high-resolution display panel, and has low power consumption with energy saving features. In this proposal, we would like to implement ZrO2 and IGZO as gate dielectric material for memory application and optimize their performance using different conditions of annealing and plasma treatment. we will implement Titanium (Ti) doping in the previously obtained high-k dielectrics for improvement of the dielectric quality in terms of its atomic level bonding and dielectric constant. We are expecting a high degree of prevention of charge loss in the dielectric with Ti incorporation, owing to its higher dielectric permittivity. Using above mentioned treatment procedure, we are expecting to form a novel dielectric layer with large memory window, lower charge loss, higher write/erase speed and with better memory retention time. And we want to implement ZrO2 and IGZO as dielectric layer for flash memory devices. We are going to study their morphological, physical and material properties along with their electrical properties for better understanding the device anatomy. We will subject our formed device to rapid thermal annealing (RTA) for passivation of the defects in the bulk state. We are also interested to implement NH3 plasma treatment for passivation of the defect states in the obtained dielectric layers. Besides, the sample with plasma treatment can show a better charge retention. This is due to that the fluorine and nitrogen atom can passivate defects and traps to reinforce bond intensity after the plasma treatment, which can prevent the charge loss effectively, have faster programming and erasing speeds, better C-V characteristics, retention and endurance. Finally, we are also interested to implement the flash memory as a sensing element for bio-medical applications. We further want to enable our sensors to measure glucose, urea, and other different biomolecules as well as chemicals consisting of ions.

Project IDs

Project ID:PB10608-2415
External Project ID:MOST106-2221-E182-044
Effective start/end date01/08/1731/07/18


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