Development of Strain Reduced GaN and Related Devices on Ion-Implanted Si (111) Substrate

Growing high-quality nitride film on silicon with various electrical properties is necessary when integrating III-nitride and silicon devices on the same chip. Ion-implantation is one of the most important methods for selectively controlling the electrical properties of the silicon substrates. Thus, it is essential to realize how the possibility and how the qualities of the nitride films grown on implanted silicon substrates. Furthermore, ion implantation could also introduce strain into the surface of the substrate. This characteristic could also be used to accommodate the problem of lattice mismatch between Si and the epi-layers. Thus, study concerning the growth of GaN on ion-implanted silicon (111) substrates is in demand for fabricating the integrated devices. In this project, strain engineering via ion implantation and the possibility of fabricating integrated devices are proposed. Besides, a novel electrostatic discharge protection structure, based on the implanted substrate, is also scheduled to be integrated into the nitride light-emitting diodes (LEDs). The originality includes: (1) The growth of strain reduced GaN on boron-implanted silicon (111) substrates (2) Enhancement of boron solubility in silicon due to biaxial compressive strain from the GaN thin film. (3) Integrating electrostatic discharge protection structure into LEDs using boron-implanted silicon substrate which formed zener diodes.

Project ID:PB9807-2589
External Project ID:NSC98-2221-E182-004