Development of the Gan Integrated Millimeter Wave Rf Module for 5th Mobile Communication( II )

Fifth-generation wireless technology is causing a lot of excitement in the telecommunications industry, and differences of opinions. Some see 5G as the next evolution in wireless data communications, promising higher bandwidth and data rates, with significantly fewer transmission delays. Others, however, say the technology will be revolutionary, enabling a host of new applications including humanoid robots, connected cars, and the Internet of Things, with its billions of devices laden with embedded sensors. The technology involved in 5G will require small cells that connect to billions of embedded devices, and many Taiwanese companies attended the event looking to get a head start in development of 5G hardware and software. However, 5G base station system development is in infant stage owing to Taiwan had few key technologies for high power base station industry. In addition, 5G communication system exist some serious demands on power amplifier linearity, output power density, and power added efficiency. Epistar had several years GaN epiwafer and device fabrication experience and results. Owing to fit the requirement of 5G front-end ICs, Epistar established a new company "Unikron" to handle GaN device foundry service. In this project, Chang Gung University will assist Epistar to set up GaN RF device fabrication, modeling and circuit design service and related business model. First year of this project, we will design and fabricate high frequency and low leakage current AlInGaN/GaN microwave power HEMT on MCZ-MCZ SOI substrate to reduce substrate/epi layers lattice stress and signal loss tangent. In addition, the nano-gate (LG=100nm) with T-shape formation will be demonstrated to improve high frequency characteristics. Besides, device reliability was designed to be improved by using SOI substrate technology. During second year, cryogenic chamber low-frequency noise model will be used for device buffer and surface traps identification together with the trap activation energy extraction. In order to further evaluate AlInGaN/GaN reliability degradation mechanism, the low-frequency noise spectra will be measured before and after high current or high voltage stress. In addition, the modified EEHEMT model will also be adopted to establish the nonlinear larger signal model contenting the trap effect related pulse-mode model and temperature-dependent behaviors. Finally, we will realize high efficiency AlInGaN/GaN envelope tracking power amplifier, low noise amplifier, and millimeter-wave Switches for 5G base station applications. Overall, the project can demonstrate novel AlInGaN/GaN microwave power HEMT on SOI substrate and its reliability will also studied in advance.

Project ID:PB10906-0196
External Project ID:MOST109-2622-E182-001-CC2