Development of the High Indium Yellow Semiconductor Laser Using 2d Material Diselenium Compounds Template Substrate

The main research objective of this project is to develop the world's first yellow-light semiconductor laser. Using the Taiyo Nippon Sanso metal-organic chemical vapor phase deposition equipment (MOCVD, 10kpa-100kpa) to grow the nitrogen compound yellow light laser epitaxy. Indium gallium nitride (InGaN) yellow light multi-layer semiconductor laser must find a solution to obtain high-quality, high-indium-content indium nitride quantum-doped gallium nitride quantum wells and a sufficiently large electronic limited energy barrier. The existing structure of our team has obtained the 560nm wavelength from a one-year plan this year. And will continue to apply for a two-year plan, using a special patented technology which coated a few monolayers of polar two-dimensional materials (diselenium compounds) on the sapphire substrate. This technology not only can significantly increase indium content and epitaxy temperature to improve crystal quality but also can remove the buffer layer at the bottom. Finally, the active layer also proposes a strain modulation technique to increase the critical thickness to increase the indium concentration. Once this technique been commercial, green, yellow, red and other long-wavelength light emissions can achieve by InGaN based and also can develop the world's first yellow light semiconductor laser.

Project ID:PB10907-4049
External Project ID:MOST109-2221-E182-060