Device Development of Double NCS Layer Flash Ion Sensitive Field Effect Transistor with PIII Treatment

In this project, we will apply plasma immersion ion implantation (PIII) technology on flash ion sensitive field effect transistor (FISFET) to enhance its sensitivity and selectivity for sensing ions. In addition, PIII is three-dimensional material surface technology which can improve conventional two-dimensional ones. We have progressed the application of PIII treatment from on SOI to nanocrystal memory. Here we further use it on the double layer FISFETs. We plan to complete this idea by a three-years project as mentioned as following. First year: a. Physical characterization of FEIS sensing capacitors with PIII treatment. b. Process development and characterization of FEIS with PIII treatment. c. Optimization of FEIS with PIII treatment. Second: a. Process development and physical survey of FISFET b. Process development of FISFET with PIII treatment. c. Optimization of FISFET with PIII treatment. Third year: a. Process development and physical survey of double layer FISFET. b. Process development of double layer FISFET with PIII treatment. c. Optimization of double layer FISFET with PIII treatment.

Project ID:PB10001-1177
External Project ID:NSC100-2623-E182-005-NU