Effect of Nitrogen Atoms on Carrier Concentration in Nitrogen-Implanted Silicon Substrates

Lin, Jeng-Ping (PI)
Lai, Chao-Sung (CoPI)

Department of Electronic Engineering

Project: National Science and Technology Council › National Science and Technology Council Academic Grants

Project IDs

Project ID:PB8802-0329
External Project ID:NSC88-2215-E182-002

Status	Finished
Effective start/end date	01/08/98 → 31/07/99

Keywords

Nitrogen implation
Boron penetration
Deep submicron
Gate oxide
Electron direct tunneling

Access Project

https://www.grb.gov.tw/search/planDetail?id=429142