Project Details
Abstract
During past decade, automotive electronics applications exhibited a rapid development.
For low pollution and power saving considerations of gas-electric hybrid vehicle, the 300V
battery power supply for 600V motor boost converter was needed. Therefore, high efficiency
DC/DC and DC/AC converter play important roles for gas-electric hybrid vehicle. GaN has
attracted much attention due to their several special properties: fine thermal stability, high
breakdown voltage, high electron velocity, and high current density, and so on. GaN could
be applied for high frequency and high voltage operation at high temperature environment,
especially such as future automobile switching power supply application. In this study, the
GaN HEMT for automotive electronics application was developed from SiC growth
technology. The GaN buffer layer and active layer will be simulated and optimized based on
GaN epitaxy technology. The high current density and high frequency response GaN
Schottky diode and enhancement-mode power HEMT will be also fabricated and measured
for GaN boost converter IC. For system package issue, we proposed a flip-chip (FC) IC
configuration, which we will flip the corresponding HEMT and drive IC onto a protective
submount. Many bumps will connect the chip and the submount, and form a dissipation path
to sink the excess heat. Since GaN related HEMTs are known to be used in the high
frequency and high power environment, this FC structure can further increase their thermal
stability. The ultrasonic, thermal bonding processes, and ESD protection circuit will be also
studied. During ball grid bumping, ball size, pad metal and submount temperature are all the
issues of reliability. For final green 10KW electrical vehicle power system, a 20kW
experimental motor-generator set will be first established and a 20kW GaN-based
three-phase inverter will then be designed to drive the motor. Then a 20kW GaN
HEMT-based power reversible boost converter will be developed to boost the voltage of the
vehicle battery over 600V for driving the electric motor. The boost converter can also charge
the vehicle battery using the kinetic energy stored in the rotor of the motor when the electric
motor is operated at regeneration mode. In addition, the torque and speed control of the
electric motor will be realized by the adaptive proportional resonant controller-based
field-oriented vector control technique. The switching frequency of the inverter will be
designed according to the response speed, conduction resistance, and the parasitic
inductance of the HEMT module. This project will finally integrate the GaN HEMT-based
boost converter IC and the GaN HEMT-based three-phase inverter IC into a high-efficiency
electric motor driver rated over ten thousand Watt.
Project IDs
Project ID:PB10301-1333
External Project ID:NSC101-2632-E182-001-MY3
External Project ID:NSC101-2632-E182-001-MY3
Status | Finished |
---|---|
Effective start/end date | 01/08/14 → 31/07/15 |
Keywords
- electric vehicle
- Gallium Nitride (GaN)
- SiC substrate
- ESD Protection
- Flip-chip Package
- regeneration braking
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