High-K Pr/sub 2/O/sub 3/ and Y/sub 2/O/sub 3/ Gate Dielectrics for Thin-Film Transistors, Flash Memories and Ion-Sensitive Field-Effect-Transistors Applications

Project: National Science and Technology CouncilNational Science and Technology Council Academic Grants

Project Details

Abstract

The development of semiconductor industry and bio-technology in the twenty-one centuries improves the human life and makes everything possible. In the world, the insight of human was paid for the semiconductor industry and bio-technology to improve the quality of human life. The application of thin-film transistor (TFT) was spread out the liquid-crystal display (LCD) of electronic product, such as digital camera, projector, LCD and so on. The speed and size of LCD are mainly affected by TFT. The application of flash memory was spread out the portable electronic product, including cellular phone, digital camera, USB data traveler and so on. In order to need for market, the large capacity, high speed and low operation voltage of flash memory require more one product. Between human and biological class, we can change and control the limit of human and biological gene, such as DNA serial, the human xerox and bio-chips. This project was concentrated on the high-k praseodymium oxide and yttrium oxide gate dielectrics for thin-film transistors, flash memories and ion-sensitive field-effect-transistors applications. New high-k gate materials will apply to the thin-film transistors, flash memories and ion-sensitive field-effect-transistor of semiconductor for integration, reasonable, and commercialization. This project was divided into three years: 1. Development of high-k praseodymium oxide and yttrium oxide gate dielectrics for thin-film transistors applications, they will possess high Ion/Ioff ratio, high effective mobility, and excellent reliability. 2. Development of high-k praseodymium oxide and yttrium oxide gate dielectrics for flash memories applications, they will possess high P/E speed, long data retention, high P/E cycles, and small gate and drain disturb. 3. Development of high-k praseodymium oxide and yttrium oxide gate dielectrics for ion-sensitive field-effect-transistors applications, they will possess high sensitivity, small drift, low hysteresis, small size, and low cost.

Project IDs

Project ID:PB9801-2173
External Project ID:NSC97-2221-E182-050-MY3
StatusFinished
Effective start/end date01/08/0931/07/10

Keywords

  • high-k
  • Pr2O3
  • Y2O3
  • gate dielectric
  • TFT
  • flash memory
  • and ISFET

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