High Performance Gan Power and Microwave Device on 6-Inch Si Substrate( II )

Project: National Science and Technology CouncilNational Science and Technology Council Academic Grants

Project Details


Past decade, 6-inch GaN related field-effect transistor technology exhibited a great success and huge progress such as material epitaxy, device fabrication, and package method in the worldwide. In addition, due to the mature GaN FET technology, the fabrication cost was also reduced. GaN material has attracted so much attention due to their several special properties: fine thermal stability, high breakdown voltage, high electron velocity, and high current density, and so on. GaN could be applied for high frequency and high voltage operation at high temperature environment, especially such as future switching power supply application and microwave power amplifier. In this project, the high-volume production GaN on Si substrate depletion-mode HEMT without gold metal will be taped-out in Taiwan standard 6-inch Si foundry. In the beginning of project, the optimization of HEMT epitaxy structure, non-gold process, diamond-like carbon heat dissipation layer, and air-brisge heat distribution layer design will be investigated and realized in Chang Gung University to fit commercial specifications. Then the whole mask and process runcard will be transfer to Episil for high volume 0.5 and 0.25 |im gate length production. The production mask will be designed and hold by CGU and JMIC simultaneously. After the 6 inch wafer process was finished, the wafer will be sent to YTEC for 100% test and out-spec dies will be inked. The high power device with 600Vbreakdown voltage and 12A〜50A output current will be cascaded with a low voltage Si control device in JMIC for enhancement-mode power device package and cascaded E-mode GaN HEMT is suitable for switching power supply and audio amplifier application. The medium power device with 600V breakdown voltage and 2A〜10A output current will be package as microwave power device with pre-matching layout and this kind of product is suitable for 5GHz base-station power amplifier application. Therefore, this cooperation project will focus on the GaN material growth, fabrication, power device layout, thermal dissipation, and package method for potential switching power device and microwave power device applications with JMIC. Moreover, this project also provides a great opportunity for CGU transferring GaN HEMT technology to JMIC and JMIC also adds their package ability to high volume product GaN devices.

Project IDs

Project ID:PB10507-1304
External Project ID:MOST105-2622-E182-001-CC2
Effective start/end date01/06/1631/05/17


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