High Speed and Low Power Graphene Nano-disk Quantum Memory

In this sub-project, we combine the low damage plasma technique of the main project to fabricate the graphene nano-disk quantum memory. By using the oxygen plasma etching, nitrogen plasma doping, CH4 plasma reduction and passivation, and fluorine contained plasma for fluorination to achieve the high speed and low power graphene nano-disk quantum memory. The quantum effect and memory characteristics will be used to characterize the effect of low damage plasma treatment. The temperature effect, light modulation, frequency response and waveform will be combined for measurement and the material properties will be used to analyze it. There are three parts of this project: 1. By using the gold nanoparticles as the nanomask, the graphene nano-disk can be fabricated through the oxygen plasma etching to finish the quantum memory. In addition, the materials and thickness will be fine-tuned to lower the operation voltage and the quantum effect and memory characteristics will be used to characterize the device. 2. Because of the good retention properties of the graphene nano-disk, the tunneling oxide can be effectively thinned down for high speed operation of the graphene nano-disk quantum memory. The nitrogen plasma doping can be used to modify the energy band diagram of the graphene nano-disk and the influence of the treatment on the quantum effect and memory properties will be discussed. We also use the temperature and light to investigate the quantum effect. 3. To further improve the retention properties, the CH4 plasma will be used to reduce and passivate the graphene nano-disk for low defect density. The fluorine-contained plasma will also be used to fluorinate the graphene to form the graphene nano-disk. The low horizontal leakage current can be reduced and the defects at periphery can be eliminated. Finally, the frequency and waveform will be modified to remove the electrons in different quantum states for high speed erasing.

Project ID:PB10207-1807
External Project ID:NSC102-2221-E182-063