High Uniformity P-Gan Gate Power Device on 6-Inch Soi Substrate and Its Package Technology( I )

Chiu, Hsien-Chin (PI)

Department of Electronic Engineering

Project: National Science and Technology Council › National Science and Technology Council Academic Grants

Project IDs

Project ID:PB10706-0420
External Project ID:MOST107-2218-E182-010

Status	Finished
Effective start/end date	01/05/18 → 30/04/19

Keywords

p-AlGaN Composited Epi Structure
Enhance-mode GaN Power device
Low turn-on Voltage Power Diode
Microwave Annealing Technology
SOI Substrate Application
High Power AlN Package

Access Project

https://www.grb.gov.tw/search/planDetail?id=12589004