High Uniformity p-GaN Gate Power Device on 6-inch SOI substrate and its package technology( II )

Chiu, Hsien-Chin (PI)
Kuo, Hao Chung (CoPI)

Department of Electronic Engineering

Project: National Science and Technology Council › National Science and Technology Council Academic Grants

Project IDs

Project ID:PB11006-0616
External Project ID:MOST110-2218-E182-001

Status	Finished
Effective start/end date	01/05/21 → 30/04/22

Access Project

https://www.grb.gov.tw/search/planDetail?id=13789233