Improvement of Electron-Hole Transport Symmetry by P-Side down Gan-Based Leds

Project: National Science and Technology CouncilNational Science and Technology Council Academic Grants

Project Details

Abstract

This project will execute for three years. The main topic of this project is to epitaxy the p-side down Light-Emitting Diodes (PDLEDs) to improve the electron-hole transport symmetry. P-side down GaN-based LED that grown p-type GaN firstly than n-type GaN can growth better quality of p-GaN due to the higher growth temperature. This novel method can get better quality and lower electric resistance on p-GaN. The following sub-project is implemented within three years. First year: We will get the high quality and low electric resistance of p-GaN by adjusting the epi parameters. First, the parameter of temperature will be carried out to get the better quality of p-GaN. Then, the carry gas(H2/N2) and the ratio of V/III also be implemented to optimized the concentrations . Second year: We will epitaxy the high quality of MQW and n-GaN. By adjusting the epi parameters(growth temperature, ratio of V/III, carry gas), we grow the high quality of MQW on the p-GaN. Then, we grow the n-GaN on the MQW. The growth temperature of n-GaN can not be too high due to absorption of MQW. The p-side down Light-Emitting Diodes (LEDs) will acomplish and measure the optical property. Third year: We will focus on the annealing of p-GaN. The annealing parameter of PDLEDs must be changed due to the different position and quality of p-GaN. The p-side down Light-Emitting Diodes (LEDs) will be accomplish and fabricate the LED devices. Finally, the electrical characteristic of PDLEDs will be carried out. In this project, we will grow the p-side up and p-side down light emitting diodes. And modify the growth conditions for pursuing high efficiency LEDs, we do expect a novel generation for new technical of LED on high current injection.

Project IDs

Project ID:PB10701-0271
External Project ID:MOST105-2221-E182-034-MY3
StatusFinished
Effective start/end date01/08/1831/07/19

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