Improvement of Electron-Hole Transport Symmetry by P-Side down Gan-Based Leds

This project will execute for three years. The main topic of this project is to epitaxy the p-side down Light-Emitting Diodes (PDLEDs) to improve the electron-hole transport symmetry. P-side down GaN-based LED that grown p-type GaN firstly than n-type GaN can growth better quality of p-GaN due to the higher growth temperature. This novel method can get better quality and lower electric resistance on p-GaN. The following sub-project is implemented within three years. First year: We will get the high quality and low electric resistance of p-GaN by adjusting the epi parameters. First, the parameter of temperature will be carried out to get the better quality of p-GaN. Then, the carry gas(H2/N2) and the ratio of V/III also be implemented to optimized the concentrations . Second year: We will epitaxy the high quality of MQW and n-GaN. By adjusting the epi parameters(growth temperature, ratio of V/III, carry gas), we grow the high quality of MQW on the p-GaN. Then, we grow the n-GaN on the MQW. The growth temperature of n-GaN can not be too high due to absorption of MQW. The p-side down Light-Emitting Diodes (LEDs) will acomplish and measure the optical property. Third year: We will focus on the annealing of p-GaN. The annealing parameter of PDLEDs must be changed due to the different position and quality of p-GaN. The p-side down Light-Emitting Diodes (LEDs) will be accomplish and fabricate the LED devices. Finally, the electrical characteristic of PDLEDs will be carried out. In this project, we will grow the p-side up and p-side down light emitting diodes. And modify the growth conditions for pursuing high efficiency LEDs, we do expect a novel generation for new technical of LED on high current injection.

Project ID:PB10507-2958
External Project ID:MOST105-2221-E182-034-MY3