Improvement of InGaN Green LED by Reducing the Device Polarization Field

This project will execute for three years. The main topic of this project is the effect between epitaxial growth and piezoelectric field of III-nitride materials. Moreover, changing the surface topography by altering the growth mode and substrate orientation in order to ameliorate the piezoelectric field in the growth structure is also including in this project. We will separate this project in three main sections: I. In the first year, we will modify surface characteristics of the film growth on c-plane sapphire by changing the growth temperature of the GaN-buffer layer. II. In the second year, we will extract the best epitaxial growth parameters of our MOCVD system in order to investigate the ameliorating effect on piezoelectric field the devices grown on patterned GaN and r-plane substrate. We expect that the dislocation densities will decrease from 5*106 cm-2 to 3*103 cm-2. III. In the third year, by combining the accomplishment in the first and second years, we will growth quantum dot structure on patterned GaN and r-plane sapphire substrate. Beside, we will further investigate the emission concurrent light from quantum dot with different Indium composition by utilizing self-assembled pattern buffer layer. The final goal is to emit white light from the device.

Project ID:PB9801-1190
External Project ID:NSC96-2221-E182-049-MY3