Influence of Ti Doping into Oxide Film on the Structural and Electrical Characteristics of Flexible Tft and Nonvolatile Memory Tft Devices

The InGaZnO (IGZO) TFT has attracted much attention for the active matrix organic light emitting diode (AMOLED) flat panel display (FPD) applications because of its high mobility, good uniformity and low process temperature. IGZO TFT with high-k gate oxide can achieve a lower operation voltage and a higher mobility. The application of flash memory has been spread out through the portable electronic product, including cell phone, digital camera, USB devices and so on. In order to achieve large capacity, SONOS-type flash memory with a high speed and low operation voltage is one of most significant candidate for next generation memory. This project will focus on the influence of Ti-doping in reliability of flexible oxide semiconductor TFT and nonvolatile memory TFT devices. The Ti-doped into Sm2O3 and IGZO films will be applied to the IGZO TFTs and IGZO nonvolatile memory TFT for transparent-flexible integration, and commercialization applications. This project is divided into three years: 1. Investigation of the physical and electrical properties of Ti-doped into the Sm2O3 and IGZO films. 2. Development of high-k Sm2O3 gate dielectrics for flexible IGZO TFT devices applications, it will achieve a high Ion/Ioff ratio, high effective mobility, low subthreshold swing (SS) and excellent reliability. 3. Development of high-k Sm2O3 charge trapping layer for flexible TFT flash memories applications, it will possess a high P/E speed, low operation voltage, good data retention, high P/E cycles, and small gate and drain disturb.

Project ID:PB10108-2651
External Project ID:NSC101-2221-E182-059