Integration Design of Millimeter-Wave Low-Noise Downconverter and Multi-Band Filter with Single Chip Technology

Recently, the rapid progresses in monolithic microwave integrated circuit fabrication and wireless communication technologies have lead to various RF circuits fabricated by using MMIC technology. The major trend of developing RF integrated circuit design is to find out the method to integrate different kinds of microwave circuits into a single substrate to realize the system on single chip (SOC). Beside, to push the operation frequencies of RF modules up to millimeter-wave bands with lower power consumption and better characteristics is the other important subject. Based on our own experiences in designing various microwave circuits, such as filters, couplers and some low-noise down-converters by using commercial CMOS technology, we plan to develop various millimeter-wave circuits, which include the dual-band filter, the low-noise amplifier, active balun and balance mixer, etc., in the NSC project of the next few years. To achieving the goal of realization of the proposed millimeter-wave module, design methods and equivalent circuit models that can help to determine the final layout patterns of the dual-band filter, which is composed of semi-lumped and distributed type filters for lower and higher passband operations, respectively, and fabricated with MMIC technology, will be developed first. Then we will integrate all of previously mentioned filters, active balun, low-noise amplifier and double-balanced mixer into a single Si chip to realize a low-noise down converter module that can be applied in millimeter-wave wireless communications or radar detection systems.

Project ID:PB10007-2276
External Project ID:NSC100-2221-E182-062