Investigation of Activation Mechanisms during Microwave Annealing for Dopants Implanted under the Amorphization Threshold

Chang, Ruey-Dar (PI)

Department of Electronic Engineering

Project: National Science and Technology Council › National Science and Technology Council Academic Grants

Abstract

目前運算架構轉向分散，硬體系統架構也是趨向分散，需要發展三維積體電路。本計畫將釐清非晶化臨界值以下的離子植入摻雜經微波退火產生載子的機制，協助導入微波退火於後段低溫三維製程。

Project IDs

Project ID:PB11207-4311
External Project ID:NSTC112-2221-E182-066

Status	Finished
Effective start/end date	01/08/23 → 31/07/24

Keywords

defect
carrier
ion implantation
microwave annealing
Hall measurement

Access Project

https://www.grb.gov.tw/search/planDetail?id=15484949