Investigation of InN Optoelectronics Devices Fabricated by Metal Organic Chemical Vapor Deposition

The main objective of this is to characterize and grow indium nitride (InN) thin films and low-dimensional nanostructures with high epitaxial quality by MOCVD. Fundamental physics and are devices fabrication both included in our research. The effects on quantum efficiency and carrier dynamics of quantum confinement and surface-to-volume ratio will be analyzed. In addition, we will fabricate the InN-based electronic devices based on our past experiences. The main research contents of the three years are: (1) in the first year, the objective is to optimize the MOCVD parameters such as substrate, growth temperatures, flow rate of precursors and III/V ratio. And this will be achieved by the feedback of optoelectronic experimental results. (2) Fabrication of low-dimensional nanostructures (nanowires, nanorods and quantum dots) and p-type InN will be the main objectives of the second year. The correlation between size effects and optoelectronic properties will be examines and discussed. And it is crucial to realize p-type InN by lowering background carrier concentration. (3) Due to the excellent features of high mobility and high saturation velocity, we will demonstrate InN-based electronic devices such as MISFET and HEMT in the third year. The aims in various phases are to help us understanding the physics underlying, and extend the application fields of InN-based materials and devices.

Project ID:PB9902-0752
External Project ID:NSC97-2112-M182-004-MY3