Investigation of the Carrier Formation Mechanism Affected by Ion Implantation Defects

Chang, Ruey-Dar (PI)

Department of Electronic Engineering

Project: National Science and Technology Council › National Science and Technology Council Academic Grants

Abstract

目前記憶體內運算已經成為延續摩爾定律重要的方向，需要發展三維積體電路。本計畫將釐清離子植入缺陷於低溫產生載子的機制，協助導入離子植入於低溫三維製程之開發，在學理及實務上皆有所貢獻。

Project IDs

Project ID:PB11107-7827
External Project ID:MOST111-2221-E182-059

Status	Finished
Effective start/end date	01/08/22 → 31/07/23

Access Project

https://www.grb.gov.tw/search/planDetail?id=14507707