Investigation on Carrier Dynamics and 2deg Properties of Polar and Nonpolar In-Rich Nitride Nanostructures and Epitaxial Films

The main objective of this project is to achieve the polar and non-polar InN epitaxial growth and develop the InN-based epitaxial structures and 2DEG-FET. Researches categories include both fundamental physics and practical implementation. Carrier dynamics, morphology and density control, and 2DEG behavior will be examined and discussed. In addition, the demonstration of novel InN-based devices can explore the applications for electronics and worldwide energy issue. The main research contents of the three years are: (1) in the first year, the objective is to fabricate low-dimensional InN nanostructures with controllable morphology and density by chemical beam epitaxial system. By applying ALD technique for surface passivation, the effect of surface states on carrier dynamics will also be investigated. (2) In the second year, the epitaxial growth of non-polar InN thin film is the most important issue. Specific substrates such as r-plane Al2O3 and LaAlO3 play the important roles. (3) In the third year, the objective is to realize AlInN/InN 2DEG-FET. The aims in various phases are to help us comprehending the physics underlying, and realize the high-quality InN-based optoelectronic devices.

Project ID:PA10007-0217
External Project ID:NSC100-2112-M182-004