Investigation on Carrier Dynamics and Photonic Applications of Indium-Rich Inaln

Project: National Science and Technology CouncilNational Science and Technology Council Academic Grants

Project Details


The main objective of this project is to achieve the polar and non-polar InN epitaxial growth and develop the InN-based 2DEG-FET and photovoltaic device. Research categories include both fundamental physics and practical implementation. Carrier dynamics, morphology and density control, surface migration of atoms, ion implantation for p-type InN, and 2DEG behavior will be examined and discussed. Besides, the fabrication and characterization of AlInN epitaxial structures will be another important topic. The demonstration of novel InN-based devices can explore the applications for optoelectronics and worldwide energy issue. The main research contents of the three years are: (1) in the first year, the objective is to fabricate polar and non-polar InN structures with controllable morphology and density by various substrates and selective growth method. Carrier dynamics, photonic properties and implementation of p-type InN will also be investigated. (2) In the second year, the epitaxial growth of non-polar InN nanostructure and AlInN alloy is the main subject. Specific substrates such as r-plane、a-plane、m-plane Al2O3 and LiAlO2 might be the suitable choice, and play important roles in crystallinity. (3) In the third year, realization of AlInN/InN 2DEG-FET and InN-based photovoltaic devices is the key objective. The aims in various phases are to help us comprehending the physics underlying, and realize the high-quality InN-based optoelectronic devices.

Project IDs

Project ID:PA10301-0832
External Project ID:NSC101-2112-M182-003-MY3
Effective start/end date01/08/1431/07/15


  • InN
  • AlInN
  • non-polar
  • 2DEG-FET
  • photovoltaic device


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