Investigations of the Nitride-Base Devices Structure Epitaxy on Silicon Carbide Substrate

The main research objective of this project is to develop the growth of AlGaN/AlN/GaN heterosturucture on silicon carbide (SiC) substrate by using Atmospheric Pressure Metal Organic Chemical Vapor Deposition (AP-MOCVD) and to fabricate a high current density enhancement mode (E-Mode), high speed field effect transistors devices by Fluorine Ion Implanttion and fabricate of Large Memory Window Flash Memory by Sputtering deposition oxide on AlGaN/AlN/GaN/SiC. In the first year the growth GaN on on silicon carbide substrate will be developed. Characteristics of GaN grown on 4H-SiC Substrates using different temperature of AlN buffers are studied. It is found that the surface morphology and crystal quality of GaN film closely depends on the stran state of AlN buffer. For decreased of the tensel stran on GaN we are insertion the Al0.08GaN layer between the AlN buffer layer and GaN layer, the goal is to achieve electron mobility greater than 2000 cm2/V-s and current density greater than 1200mA/mm by inserting thin AlN layrer in the AlGaN/ GaN-HEMT. In the second year: Develop the AlGaN/AlN/GaN/SiC structure to process for HEMT device and to measurement DC and RF characteristics. Study enhancement-mode AlGaN/AlN/GaN-SiC High electron mobility transisitor using fluoring ion implantation of the gate area. In the third year: The Metal-Oxide-Semiconducton structures (Flash Memory) using HfO2 and HfON high-K dielectric layer were fabricated dopsition on AlGaN/AlN/GaN-SiC. Their essential electrical properties and reliability were investigated. We first used different material of charge storage layer and then investigated the dffect of different RTA temperature in MOS- structures.

Project ID:PB10108-2805
External Project ID:NSC101-2221-E182-060