Investigations of the Nitride-Base High Electron Mobility Transisitor Structure Epitaxy on Silicon Carbide Substrate

The main research objective of this project is to develop the growth of AlGaN/AlN/GaN heterosturucture on silicon carbide (SiC) substrate by using Atmospheric Pressure Metal Organic Chemical Vapor Deposition (AP-MOCVD) and to fabricate a high current density. Improvement schottky diode breakdow for HEMTs device by using low Al mole fraction AlGaN buffer. finally, we are using (AP-MOCVD) growth high qulity 1~2nm AlN cap layer for AlGaN/GaN-SiC structure for MIS-HEMT device. In the first year the growth AlN insert layer between the AlGaN/GaN structure on silicon carbide substrate will be developed. The goal is to achieve electron mobility greater than 2000 cm2 /V-s and current density greater than 1200mA/mm by inserting thin AlN layer between the AlGaN/GaN structure. The AlN quality and thickness for HEMT device would have a direct impact in will achieve optimized adjustment of the AlN thickness, the other hand, During the epitaxy of the AlN inset layer must be adjustment V/III ratio for AlN condition, because from growth the AlN condition was easy generate the pits arrays or pin hole on top layer for sample surface . In the second year: Develop the AlGaN/AlN/GaN/SiC structure to process for HEMT device and to measurement DC and RF characteristics, finally for RF power was over 5 Watt and PAE＞30%. To study high breakdown voltage for HEMT-SiC device by using low Al mole fraction AlGaN buffer, we was growth double heterojunction structure for Improvement HEMT device performance. In the third year: The Metal- Isolate -Semiconductor structures by AlN for the isolate material. the high-K dielectric layer were fabricated deposition on AlGaN/GaN-SiC structure by AP-MOCVD growth AlN for the AlGaN/GaN cap layer . Their essential electrical properties and reliability were investigated. We used different material of charge storage layer and then investigated the effect of different RTA temperature in MIS- structures and also application on HEMT device to performance DC and RF characteristics.

Project ID:PB10207-1816
External Project ID:NSC102-2221-E182-066