Low-Temperature Activation of Boron in Germanium Substrates with Low Implantation Damages

Project: National Science and Technology Council › National Science and Technology Council Academic Grants

Project Details

Abstract

本研究利用自行開發之背向霍爾量測,透過製程與元件模擬之校正,分析低損傷離子植入硼於鍺基板在攝氏400度以下之初始活化行為,有助於發展低溫摻雜活化技術,實現三維堆疊元件.

Project IDs

Project ID:PB11007-2723
External Project ID:MOST110-2221-E182-060
StatusFinished
Effective start/end date01/08/21 → 31/07/22

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