Magnetic and Dielectric Studies on Mixture Thin Film of Multiferroic Material, Bifeo3 and Lanthanide Oxides

BiFeO3(BFO) is a room-temperature multiferroic material, in which the canted antiferromagnetic and ferroelectric phases coexist in room temperature. However, low resistivity and high leakage current are problems which limit the application on memory or electronic devices. In some previous reports, using lanthanide ion to substitute Bi can reduce the leakage current. We plan to make a thin film of BFO and lanthanide oxides by sol-gel and sputtering method. Temperature-dependent and magnetic field-dependent dielectricity, electric polarization, and magnetic properties will be measured. We will compare the leakage, polarization, and magnetic properties of different films made by sol-gel and sputtering. Electric polarization in pulsed-high-magnetic field will be measured, too, in order to know the influences on electric polarization by change electron spin ordering. According to these results, we will study the effect of different BFO-lanthanide oxide concentration and the strength of magnetoelectric coupling on BFO-lanthanide oxide thin film. This study will benefit on finding new room-temperature multiferroic material as well as better potential on application use.

Project ID:PA10907-1441
External Project ID:MOST109-2112-M182-002