Novel Electrode Structures and Alloy Techniques with Plasma Treatment on Metal Oxide Resistive Layer for Resistive Switching Memory Application (Ii)

Project: National Science and Technology CouncilNational Science and Technology Council Academic Grants

Project Details

Abstract

Recently, the technology for some new nonvolatile memories (NVMs) has to be developed to replace the conventional hard disk storage. Many novel NVM technologies such as resistive switching memory are developed. It is responsible for the simple structure, popular material and compatible with integrated circuit process of the resistive switching memory. In addition, the characteristics of resistive switching memory are defined by the material itself. The most popular material is metal oxide such as NiO etc., showing superior memory and endurance properties. In this project, we will fabricate HfO2 and Gd2O3 metal-oxide resistive switching memories with novel hemi-spherical grain (HSG) bottom electrode structure, Al- and Ti-alloy top electrode, and hydrogen plasma treatment techniques on metal-oxide resistive layer to improve the memory characteristics. It will be deeply analyzed by the electrical and physical characteristics and the operation mechanisms will be proposed by simulation. Besides, the optimized design of this resistive switching memory with structure and process will also be studied. The project item of the first year was about the process optimization of the Al- and Ti-alloy top electrode, which has the preliminary results. The main project items of the remaining two years are as follows: 1. The process of hydrogen plasma treatments such as high-density hydrogen plasma, remote hydrogen plasma and hydrogen plasma immersion ion implantation (PIII) on metal-oxide resistive layers is optimized and studied. 2. The hemi-spherical grain poly-Si bottom electrode structure fabricated by low pressure chemical vapor deposition (LPCVD) is optimized and studied. 3. Finally, with the combination of above novel techniques, the resistive switching memory with novel HSG electrode structure, alloy techniques and hydrogen-contained plasma treatment on metal oxide resistive layer is fabricate to obtain the superior memory characteristics.

Project IDs

Project ID:PB10007-2293
External Project ID:NSC100-2221-E182-012
StatusFinished
Effective start/end date01/08/1131/07/12

Keywords

  • nonvolatile memory
  • floating gate (FG)
  • resistive switching memory (RRAM)
  • gadolinium oxide (GdxOy)
  • remote plasma
  • plasma immersion ion implantation (PIII)

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