Project Details
Abstract
Recently, the technology for some new nonvolatile memories (NVMs) has to be
developed to replace the conventional hard disk storage. Many novel NVM technologies such
as resistive switching memory are developed. It is responsible for the simple structure,
popular material and compatible with integrated circuit process of the resistive switching
memory. In addition, the characteristics of resistive switching memory are defined by the
material itself. The most popular material is metal oxide such as NiO etc., showing superior
memory and endurance properties.
In this project, we will fabricate HfO2 and Gd2O3 metal-oxide resistive switching
memories with novel hemi-spherical grain (HSG) bottom electrode structure, Al- and Ti-alloy
top electrode, and hydrogen plasma treatment techniques on metal-oxide resistive layer to
improve the memory characteristics. It will be deeply analyzed by the electrical and physical
characteristics and the operation mechanisms will be proposed by simulation. Besides, the
optimized design of this resistive switching memory with structure and process will also be
studied. The project item of the first year was about the process optimization of the Al- and
Ti-alloy top electrode, which has the preliminary results. The main project items of the
remaining two years are as follows:
1. The process of hydrogen plasma treatments such as high-density hydrogen plasma, remote
hydrogen plasma and hydrogen plasma immersion ion implantation (PIII) on metal-oxide
resistive layers is optimized and studied.
2. The hemi-spherical grain poly-Si bottom electrode structure fabricated by low pressure
chemical vapor deposition (LPCVD) is optimized and studied.
3. Finally, with the combination of above novel techniques, the resistive switching memory
with novel HSG electrode structure, alloy techniques and hydrogen-contained plasma
treatment on metal oxide resistive layer is fabricate to obtain the superior memory
characteristics.
Project IDs
Project ID:PB10007-2293
External Project ID:NSC100-2221-E182-012
External Project ID:NSC100-2221-E182-012
Status | Finished |
---|---|
Effective start/end date | 01/08/11 → 31/07/12 |
Keywords
- nonvolatile memory
- floating gate (FG)
- resistive switching memory (RRAM)
- gadolinium oxide (GdxOy)
- remote plasma
- plasma immersion ion implantation (PIII)
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