Novel Tin Barrier Layer with Wnx/Ruo2 Electrode on La/Y Doped Hfo2 Ferroelectric Tunnel Junction for Artificial Intelligence Applications

Project: National Science and Technology CouncilNational Science and Technology Council Academic Grants

Project Details

Project IDs

Project ID:PB11207-4225
External Project ID:NSTC112-2221-E182-064-MY3
Effective start/end date01/08/2331/07/24


  • Ferroelectric
  • nitrogenized tungsten
  • La:HfO2
  • Y:HfO2
  • RuO2/WNx electrode
  • TiN barrier layer
  • orthorhombic
  • remnant polarization
  • long endurance
  • fatigue mechanism
  • retention
  • reliability
  • ferroelectric tunnel junction (FTJ)
  • artificial synapse
  • low energy
  • artificial intelligence.


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